Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices

被引：0

作者：

Tang, Ting-wei ^{[1
]}

Yoon, Il-o ^{[2
]}

Sano, Nobuyuki ^{[3
]}

Jin, Seonghoon ^{[4
]}

Fischetti, Massimo V. ^{[1
]}

Park, Young June ^{[2
]}

机构：

[1] Univ Massachusetts, Amherst, MA 01003 USA

[2] Seoul Natl Univ, Seoul, South Korea

[3] Univ Tsukuba, Tsukuba, Ibaraki, Japan

[4] Synopsys Inc, Mountain View, CA USA

来源：

2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年

关键词：

Boltzmann transport equation; relaxation time approximation; backscattering coefficient; ballistic efficiency; virtual source; critical length; PART I; SCATTERING; MOSFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We compare two relaxation time approximation (RTA) models of the 1-D Boltzmann transport equation, one of Sano and the other of Gnani et al.. Using an asymmetric parabola to approximate the potential-energy profile, we determine semi-analytically the distribution function at the virtual source (VS). We consider three different forms of energy dependence of the relaxation time (RT). The backscattering coefficient and ballistic efficiency are calculated and compared for each RTA model. We find that the VS model is strictly applicable only to the case of a constant mean-free-path.

引用

页码：61 / 64

页数：4

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