Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

被引：51
|
作者：
Gao, F [1 ]
Li, GH
Zhang, JH
Qin, FG
Yao, ZY
Liu, ZK
Wang, ZG
Lin, LY
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2001年 / 18卷 / 03期
关键词：
D O I：
10.1088/0256-307X/18/3/345
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.
引用
收藏
页码：443 / 444
页数：2
相关论文
共 50 条
  • [1] Epitaxial growth of ZnO film on Si(111) with CeO2(111) as buffer layer
    Wong, T. I.
    Tan, H. R.
    Sentosa, D.
    Wong, L. M.
    Wang, S. J.
    Feng, Y. P.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (41)
  • [2] TYPE-B EPITAXIAL-GROWTH OF CEO2 THIN-FILM ON SI(111) SUBSTRATE
    NAGATA, H
    YOSHIMOTO, M
    KOINUMA, H
    MIN, E
    HAGA, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 123 (1-2) : 1 - 4
  • [3] A novel approach to the epitaxial growth of CeO2 films on Si(111)
    Zarraga-Colina, J
    Nix, RM
    Weiss, H
    [J]. SURFACE SCIENCE, 2004, 563 (1-3) : L251 - L255
  • [4] EPITAXIAL-GROWTH OF CEO2 FILMS ON SI(111) BY SPUTTERING
    YAEGASHI, S
    KURIHARA, T
    HOSHI, H
    SEGAWA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 270 - 274
  • [5] ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111)
    TYE, L
    ELMASRY, NA
    CHIKYOW, T
    MCLARTY, P
    BEDAIR, SM
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (24) : 3081 - 3083
  • [6] Epitaxial growth and optical properties of Er-doped CeO2 on Si(111)
    Inaba, Tomohiro
    Tawara, Takehiko
    Omi, Hiroo
    Yamamoto, Hideki
    Gotoh, Hideki
    [J]. OPTICAL MATERIALS EXPRESS, 2018, 8 (09): : 2843 - 2849
  • [7] Growth of epitaxial CeO2(111) film on Ru(0001) and its reduction by hydrogen
    Komeda, Tadahiro
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 250
  • [8] An investigation on the epitaxial growth of GaN film on Si(111) substrate
    Zhang, HX
    Ye, ZZ
    Zhao, BH
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (06) : 529 - 531
  • [9] Structure of ultrathin epitaxial CeO2 films grown on Si(111)
    Joumori, S
    Nakajima, K
    Suzuki, M
    Kimura, K
    Nishikawa, Y
    Matsushita, D
    Yamaguchi, T
    Satou, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B): : 7881 - 7883
  • [10] Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS film on Si(111) substrate
    Miyake, Aki
    Kominami, Hiroko
    Tatsuoka, Hirokazu
    Kuwabara, Hiroshi
    Nakanishi, Yoichiro
    Hatanaka, Yoshinori
    [J]. Japanese journal of applied physics, 2000, 39 (11 B)
12345