y Integration of Mid-Infrared Light Sources on Silicon-Based Waveguide Platforms in 3.5-4.7 m Wavelength Range

Mid-infrared light sources are attracting attention for use in spectroscopic sensing, thermal imaging, and infrared countermeasures. Integration of these sources on Si-based waveguides allows for more functional and complex photonic circuits to be integrated on a single chip. This paper focuses on the key aspects of this integrated platform. The operation of silicon-on-insulator waveguides beyond 4.0m wavelength with increasing waveguide core thickness is discussed, and the effects of various cladding materials on waveguide propagation loss is demonstrated. Low loss waveguides and Mach-Zehnder interferometers in Ge-on-Si waveguide platform are discussed and beam combiners in the form of arrayed waveguide gratings are demonstrated in both the platforms. Interband cascade lasers are integrated on silicon-on-insulator waveguides with direct bonding to realize Fabry-Perot lasers. Power scaling of integrated lasers is validated by integrating quantum cascade lasers with silicon-on-insulator beam combiners. Results for the first integrated Fabry-Perot quantum cascade lasers on Ge-on-Si waveguides are discussed, together with the potential use of these waveguides to provide a better heat sink for integrated mid-infrared light sources.