New fine metal pattern fabrication by transferral process

A new process for fine metal pattern fabrication is developed. A resist film is coated on a wafer on which devices such as transistors have been fabricated (acceptor sample) and fine metal patterns are fabricated in another wafer (donor sample). The donor sample is pressed against the acceptor sample and the fine metal patterns on the donor sample are transferred to the resist film on the acceptor sample. An unbaked soft resist film is used as an adhesive layer in order to increase the adhesion force between the metal patterns and the resist film. The Cu film used is overetched in order to decrease the adhesion force between the metal patterns and the donor sample. Lateral Ni cantilevers are fabricated with the new technique. The thickness of Ni film produced is approximately 3 mum. Both a fine Ni pattern of 2 mum and a large Ni pattern of 500 pin can be fabricated simultaneously. The process is simple and a high process yield of 75-90% can be obtained.