Special issue on simulation and modeling of nanoelectronics devices - Foreword

被引：2
|
作者：
Sangiorgi, Enrico [1 ]
Asenov, Asen [1 ]
Bennett, Herbert S. [1 ]
Dutton, Robert W. [1 ]
Esseni, David [1 ]
Giles, Martin D. [1 ]
Hane, Masanu [1 ]
Jungeniann, Christoph [1 ]
Nishi, Kenji [1 ]
Selberherr, Siegfried [1 ]
Takagi, Shinichi [1 ]
机构：
[1] Intel Corp, Hillsboro, OR 97124 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 09期
关键词：
D O I：
10.1109/TED.2007.905342
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2072 / 2078
页数：7
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