Vacancy induced half-metallicity in half-Heusler semiconductors

被引:23
|
作者
Zhu, Zhiyong [1 ]
Cheng, Yingchun [1 ]
Schwingenschloegl, Udo [1 ]
机构
[1] KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
关键词
ELECTRONIC-STRUCTURE; FERROMAGNETISM; MAGNETISM;
D O I
10.1103/PhysRevB.84.113201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials is broken for all types of isolated vacancies under consideration, except for Ni-deficient NiTiSn. A half-metallic character is identified in Sn-deficient NiTiSn and Co/Ti/Sb-deficient CoTiSb. We can explain our findings by introducing an extending Slater-Pauling rule for systems with defects. A ferromagnetic ordering of the local moments due to double exchange appears to be likely.
引用
收藏
页数:4
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