Electrolyte-gated transistors with good retention for neuromorphic computing

被引:14
|
作者
Li, Yue [1 ,2 ]
Xu, Han [1 ,2 ]
Lu, Jikai [1 ,2 ]
Wu, Zuheng [1 ,2 ]
Wu, Shuyu [1 ,2 ]
Zhang, Xumeng [3 ]
Liu, Qi [3 ]
Shang, Dashan [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
SYNAPSE;
D O I
10.1063/5.0082061
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrolyte-gated transistors (EGTs) provide prominent analog switching performance for neuromorphic computing. However, suffering from self-discharging nature, the retention performance greatly hampers their practical applications. In this Letter, we realize a significant improvement in EGT retention by inserting a SiO2 layer between the gate electrode and electrolyte. The dynamic process behind the improvement is interpreted by an assumptive leakage-assisted electrochemical mechanism. In addition to improved retention, analog switching with a large dynamic range, superior linearity and symmetry, and low variation has been achieved using identical voltage pulses. Based on the experimental data, a nearly ideal recognition accuracy of 98% has been demonstrated by simulations using the handwritten digit data sets. The obtained results pave a way for employing EGT in future neuromorphic computing.
引用
收藏
页数:5
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