Thermally induced strain in MBE grown GaN layers

被引：6

作者：

Heinke, H ^{[1
]}

Kirchner, V ^{[1
]}

Einfeldt, S ^{[1
]}

Birkle, U ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

thermally induced strain; thermal expansion; GaN; high resolution X-ray diffraction;

D O I：

10.1016/S0022-0248(98)00316-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study of thermally induced strain in GaN layers grown on c-plane sapphire by molecular beam epitaxy is presented. For this, high-resolution X-ray diffraction at variable temperature (10-630 K) has been used, which is the most direct method to investigate this strain. A linear change of the lattice constant was observed for a 3 mu m thick GaN layer for temperatures above 300 K which is characterized by a thermal expansion coefficient of 3.8 x 10(-6) K-1. In contrast to this, the thermal expansion was found to be negligible for temperatures below 100 K. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：375 / 379

页数：5

共 50 条

[1] Reflectance and electroreflectance of MBE grown GaN layers
Shokhovets, SV
Goldhahn, R
Gobsch, G
Cheng, TS
Foxon, CT
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEW AND SHORT NOTES TO NANOMEETING '97, 1997, : 87 - 90
[2] A TEM assessment of GaN/SiC layers grown by MBE
Bright, AN
Brown, PD
Tricker, DM
Jeffs, N
Foxon, CT
Humphreys, CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 415 - 418
[3] Surface irregularities of MBE grown cubic GaN layers
Lima, AP
Frey, T
Köhler, U
Wang, C
As, DJ
Schöttker, B
Lischka, K
Schikora, D
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 31 - 36
[4] Impact of AlN buffer layers on MBE grown cubic GaN layers
Schoermann, Jorg
Zscherp, Mario F.
Mengel, Nils
Hofmann, Detlev M.
Lider, Vitalii
Dogahe, Badrosadat Ojaghi
Becker, Celina
Beyer, Andreas
Volz, Kerstin
Chatterjee, Sangam
GALLIUM NITRIDE MATERIALS AND DEVICES XVIII, 2023, 12421
[5] Surface potential at as-grown GaN(0001) MBE layers
Kocan, M
Rizzi, A
Lüth, H
Keller, S
Mishra, UK
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 234 (03): : 773 - 777
[6] Modulated beam growth method for MBE grown GaN layers
Liu, KT
Tezuka, T
Sugita, S
Watari, Y
Horikoshi, Y
Su, YK
Chang, SJ
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 400 - 405
[7] Screw dislocations in MBE GaN layers grown on top of HVPE layers: Are they different?
Liliental-Weber, Z
Zakharov, D
Jasinski, J
Washburn, J
O'Keefe, MA
Morkoc, H
GAN AND RELATED ALLOYS-2002, 2003, 743 : 243 - 248
[8] Strain relaxation in GaN layers grown on porous GaN sublayers
Mynbaeva, M
Titkov, A
Kryzhanovski, A
Kotousova, I
Zubrilov, AS
Ratnikov, VV
Davydov, VY
Kuznetsov, NI
Mynbaev, K
Tsvetkov, DV
Stepanov, S
Cherenkov, A
Dmitriev, VA
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 (14): : art. no. - 14
[9] Silicon δ-doping and isoelectronic doping in GaAs and GaN layers grown by MBE
Chalmers Univ of Technology, Goteborg, Sweden
Doktorsavh Chalmers Tek Hogsk, 1536 (1-55):
[10] Structure and photoluminescence investigations of Er doped GaN layers grown by MBE
Wojtowicz, T
Ng, HM
Ruterana, P
GAN AND RELATED ALLOYS - 2003, 2003, 798 : 441 - 446

← 1 2 3 4 5 →