Using factorial design and response surface methodology to optimize growth parameters of PECVD grown silicon nitride

被引：1
|
作者：
Nybergh, K [1 ]
机构：
[1] Helsinki Univ Technol, Dept Elect & Commun Engn, Electron Phys Lab, FIN-02015 Hut, Finland
来源：
PHYSICA SCRIPTA | 1999年 / T79卷
关键词：
D O I：
10.1238/Physica.Topical.079a00266
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon nitride was grown on polished silicon wafers using PECVD. The refractive index and the growth rate were measured. The data were fitted using multiple linear regression. The coefficients of the regression polynomials ate reported together with their 95% confidence intervals. In addition, the adequacy of the regression analysis is checked using ANOVA, the normal probability plot, and residual analysis. The results of this study will be used when optimizing the annealing and growth parameters of PECVD silicon nitride films deposited on silicon solar cells.
引用
收藏
页码：266 / 271
页数：6
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