[Invited] Flexible GHz Frequency and Low-Power Nanoelectronics Based on 2D Nanomaterials

被引:0
|
作者
Akinwande, Deji [1 ]
Chang, Hsiao-Yu [1 ]
Lee, Jongho [1 ]
机构
[1] Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA
关键词
D O I
10.1149/06106.0051ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this paper, substantial recent progress on graphene and transitional metal dichalcogenides on flexible substrates and the resulting high-performance electronic properties will be highlighted. Nearly defect-free monolayer graphene can now be synthesized by CVD at large-scales with material quality comparable to ex-foliated natural flakes. Fabricated transistor devices from CVD graphene on polyimide now readily afford transit frequencies around 25GHz, sufficient to realize radio-frequency circuits. Exfoliated dichalcogenides offer a route for basic experimental studies on soft substrates. MoS2 transistors on polyimide offer electronic performance comparable to devices on hard silicon substrates, including high on-off current ratio, near-ideal subthreshold swing, and current saturation. Device failure at high strains are either due to dielectric cracks or buckle delamination.
引用
收藏
页码:51 / 55
页数:5
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