Dependence of activation energy upon magnetic field and temperature in YBa2Cu3O7-δ epitaxial thin film

被引：26
|
作者：
Xu, XJ [1 ]
Fu, L
Wang, LB
Zhang, YH
Fang, J
Cao, XW
Li, KB
Hisashi, S
机构：
[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China
[2] Chinese Ctr Adv Sci & Technol, World Lab, Beijing 100080, Peoples R China
[3] Acad Sinica, Inst Plasma Phys, High Field Lab, Hefei 230031, Peoples R China
[4] Acad Sinica, Inst Solid State Phys, Hefei 230031, Peoples R China
[5] Teikyo Univ, Sch Sci & Engn, Utsunomiya, Tochigi 320, Japan
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 01期
关键词：
D O I：
10.1103/PhysRevB.59.608
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The broadening of the resistive transition in YBa2Cu3O7-delta epitaxial thin film was measured in various applied magnetic fields. The irreversibility line and its angular dependence were obtained. The temperature and magnetic field dependence of the activation energy U-0(H,T)proportional to U-0[1 - T/T-c(0)](H-0/epsilon(0)H)(2/3) were obtained from the experimental results, which is consistent with the expression of the activation energy for thermally excited flux creep deduced from the irreversibility line and Arrhenius law except for low field data in which the prefactor of the Arrhenius law has little deviation from that in high fields. [S0163-1829(99)10301-1].
引用
收藏
页码：608 / 612
页数：5
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