Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications

被引：4

作者：

Rack, MJ

Thornton, TJ ^{[1
]}

Ferry, DK

Huffman, J

Westhoff, R

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Lawrence Semicond Res Labs, Tempe, AZ 85282 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 07期

基金：

美国国家航空航天局;

关键词：

strained Si/SiGe quantum wells; cryogenic circuits; magnetotransport;

D O I：

10.1016/S0038-1101(01)00198-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results from a strained Si/SiGe quantum well MODFET measured over the temperature range 4.2-0.3 K. The Si/SiGe quantum wells are characterized by magnetotransport measurements and Auger electron spectroscopy, The I-V characteristics of the device are well behaved with no sign of the 'kink-effect' often seen in cryogenic CMOS, The device performance is limited by the resistance of the source and drain contacts. By extracting the parasitic contact resistance, we are able to determine the intrinsic transconductance of the device, which is comparable to values measured in cryogenic CMOS. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1199 / 1203

页数：5

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