Evaluation of HfO2 film structures deposited by metal-organic chemical vapor deposition using Hf(N(C2H5)2)4/O2 gas system

被引：7

作者：

Ogura, A

Ito, K

Ohshita, Y

Ishikawa, M

Machida, H

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan

[2] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4688511, Japan

[3] TRI Chem Lab Inc, Yamanashi 4090112, Japan

来源：

THIN SOLID FILMS | 2003年 / 441卷 / 1-2期

关键词：

metal-organic chemical vapor deposition; surface morphology; deposition temperature;

D O I：

10.1016/S0040-6090(03)00672-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We evaluated HfO2 films deposited by metal organic chemical vapor deposition using the Hf(N(C2H5)(2))(4)/O-2 gas system. The surface morphology and step coverage were simultaneously improved by increasing the deposition temperature. This improvement was achieved because the surface diffusion of reactants and/or their fragments was enhanced. At a low deposition temperature, N in Hf(N(C2H5)(2))(4) might disturb the surface diffusion of Hf, causing poor surface morphology and step coverage. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：161 / 164

页数：4