Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields

被引：13
|
作者：
Böhm, S
Müller, A
Schippers, S
Shi, W
Eklöw, N
Schuch, R
Danared, H
Badnell, NR
机构：
[1] Univ Giessen, Inst Kernphys, D-35392 Giessen, Germany
[2] Univ Stockholm, SCFAB, S-10691 Stockholm, Sweden
[3] Manne Siegbahn Lab, S-10405 Stockholm, Sweden
[4] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow G4 0NG, Lanark, Scotland
来源：
ASTRONOMY & ASTROPHYSICS | 2003年 / 405卷 / 03期
关键词：
atomic data; atomic processes; line : formation; plasmas; radiation mechanisms : general;
D O I：
10.1051/0004-6361:20030752
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The dielectronic recombination rate coefficient of O VI ions has been measured at the heavy ion storage ring CRYRING. The electron energy range covered all dielectronic recombination resonances attached to 2s-->2p (Deltan=0) core excitations. The rate coefficient in a plasma has been derived. It is compared to theoretical data. In addition the influence of external electric fields on the dielectronic recombination has been investigated. When increasing the electric field strength to 340 V/cm the experimental recombination rate coefficient is found to increase by up to a factor of 2.
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收藏
页码：1157 / 1162
页数：6
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