Fabrication of edge-suspended microwave passive components using CMOS-compatible micromachining

被引：0

作者：

Zhang, JW ^{[1
]}

Hon, WC ^{[1
]}

Leung, LLW ^{[1
]}

Chen, KJ ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

ICP-DRIE etching; anisotropic silicon etching; tetramethyl ammonium hydroxide (TMAH); edge-suspended structures; inductors; coplanar waveguide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the fabrication of the edge-suspended RF/rnicrowave passive components using CMOS-compatible micromachining. The edge-suspended structure can effectively improve the performance of microwave passive components without sacrificing their mechanical strength and reliability at the same time. Combination of ICP-DRIE dry etching and TMAH anisotropic etching are chosen to realize this edge-suspended structure and both of them are CMOS compatible. A TMAH solution consisting of 5wt% TMAH, 1.6wt% Si and 0.5wt% (NH4)(2)S2O8 offers effective etching of silicon along the {100} and {110} planes, while having negligible etching on aluminum and {111} planes. Layout requirement for achieving the edge-suspended passive components is also discussed. Edge-suspended spiral inductors and coplanar waveguides (CPW) with enhanced performance are fabricated successfully.

引用

页码：1695 / 1698

页数：4

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