Structural characterisation of polycrystalline SiGe thin film

被引：20

作者：

Teh, LK

Choi, WK

Bera, LK

Chim, WK

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Microelect Lab, Singapore 117576, Singapore

[2] Natl Univ Singapore, Fac Engn, Ctr IC Failure Anal & Reliabil, Singapore 117576, Singapore

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 11期

关键词：

radio frequency sputtering; silicon-germanium; polycrystalline silicon-germanium films;

D O I：

10.1016/S0038-1101(01)00241-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous Si1-xGex films, with a varying germanium. fraction, were deposited using radio frequency (r.f.) sputtering and annealed under different conditions to form polycrystalline films. The structural properties of the films were examined using X-ray diffraction (XRD) and Raman spectroscopy. From the XRD and Raman spectra, the crystallinity of the films was observed to improve with an increase in annealing temperature and duration, and with increasing germanium fraction. An anomalous retardation in the crystallisation rate was attributed to the presence of impurities within the films. The impurities, together with an increased nucleating site density, caused a significant reduction in the extracted grain size. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1963 / 1966

页数：4

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