Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

被引：12

作者：

Wen, TC

Lee, WI

Sheu, JK

Chi, GC

机构：

[1] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Dept Electrophys, Hsinchu 30050, Taiwan

[2] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 03期

关键词：

Mg-doped InxGa1-xN; wall measurement; carrier concentration; mobility; in mole fraction; photoluminescence;

D O I：

10.1016/S0038-1101(01)00044-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bull; Mg-doped InxGa1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：427 / 430

页数：4

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