Electrodeposited thin film ZnTe semiconductors for photovoltaic applications

被引：28
|
作者：
Arico, AS
Silvestro, D
Antonucci, PL
Giordano, N
Antonucci, V
机构：
[1] TAE,INST CNR,I-98126 MESSINA,ITALY
[2] UNIV REGGIO CALABRIA,FAC ENGN,INST CHEM,I-89100 REGGIO CALABRIA,ITALY
来源：
ADVANCED PERFORMANCE MATERIALS | 1997年 / 4卷 / 01期
关键词：
chalcogenide semiconductors; thin films; electrodeposition; photovoltaics;
D O I：
10.1023/A:1008632602023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrodeposition of zinc telluride thin films on tin conductive oxide substrates in aqueous solution containing TeO2 and ZnCl2 was studied. The electrodeposition mechanism was investigated by cyclic-photovoltammetry. The appropriate potential region where formation of stoichiometric ZnTe semiconductor occurs, was found to be close to -0.75 V vs. SCE. Annealing of the as-deposited films was carried out at 400 degrees C to obtain a crystalline phase. The crystallographic structure and him morphology were studied by XRD and SEM analyses, respectively. ZnTe films have the hexagonal structure of wurtzite and they are characterized by good homogeneity. A direct energy gap of 2.25 eV was determined by NIR-VIS-UV spectroscopy, in close agreement with the energy gap of ZnTe single crystals. A fractal dimension of 2.4 was determined by AFM analysis of ZnTe films. The mechanism of the thin film growth has been interpreted in terms of diffusion limited aggregation model.
引用
收藏
页码：115 / 125
页数：11
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