Hot carrier energy loss rates in II-VI and III-V ternary alloy semiconductors obtained with and without: Hot phonon effects

A formalism is described to calculate the rates of hot carrier cooling via phonon emission in ternary alloys of III-V and II-VI compound semiconductors. The coupled dynamics of hot carriers and hot optical phonons is incorporated to include hot phonon effects. The energy loss rare calculations take into account the various effects specific to mixed crystals such as occurrence of additional phonon modes and modifications of the Frohlich and other dominant carrier.-phonon interaction for alloy systems. Also, the possible different decay times of the AC and BC (or AB and AC) like optical phonon modes for alloys of A(x)B(1-x)C (or AB(x)C(1-x)) type are considered. Using this formalism, the authors calculate the hot carrier energy loss rates (ELRs) in GaAs, AlAs and their alloy: AlxGa1-xAs (x = 0.33) with and without hot phonon effects, as an illustration. The ELRs in the 'no hot phonon' case at 500 K are in th proportion 1.0:1.6:2.46 for GaAs: AL(0.33)Ga(0.67)As:AlAs; whereas the maximum reductions in these ELRs due to hot phonon effects are in the ratio 1.0:1.12:1.52 respectively, for an initial carrier temperature of 500 K. In addition, are presented the ELR calculations for CdSxSe1-x, GaAsxP1-x as well as In0.53Ga0.47As alloy systems. The dynamics of the optical phonon modes in In0.53Ga0.47As is compared, as an illustration, with that in pure InAs and GaAs.