Preparation and structural characterization of Zn1-xMnxSe thin films

Undoped and Mn doped ZnSe nanoparticles thin films of thickness ranging from 20 to 120 nm have been successfully synthesized via inert gas condensation (IGC) technique with constant Argon gas flow rate and deposition temperature 300 K. The energy dispersive X-ray analysis (EDX) for freshly deposited Zn1-xMnxSe thin films were carried out and revealed that Mn contents (x) were 0, 0.05, 0.16 and 0.25. The as-prepared deposited thin films of different thickness were examined using transmission electron microscope (TEM) and showed that all films were nanocrystalline with particle size ranging from 4.1 to 6.6 nm. The grazing incident in-plane X-ray diffraction (GIIXD) patterns verified nanocrystalline single phase zinc blende structure for 80 nm film thickness for all examined Zn1-xMnxSe compound films. A broadening of main characteristic lines (111), (220) and (311) of cubic phase was observed and was attributed to the lower particle size in nanocrystalline examined Zn1-xMnxSe compound films.