Effect of electronic irradiation in the production of NbSe2 nanotubes

被引:17
|
作者
Galván, DH [1 ]
Kim, JH
Maple, MB
Adem, E
机构
[1] Univ Calif San Diego, Inst Pure & Appl Phys Sci, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
来源
FULLERENE SCIENCE AND TECHNOLOGY | 2001年 / 9卷 / 02期
关键词
D O I
10.1081/FST-100102969
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiating NbSe2 with high doses of electron irradiation. The apparatus used for the irradiation was a 2 MeV Van de Graaff accelerator at the following conditions: voltage 1.3 MeV, current 5 muA, dose rate 25 kGy/min, and total dosage 1000 kGy. These conditions were maintained fixed while irradiation dosage was changed between 100, 250 and 500 Mrad. We observed enormous and very well defined nanotubes with a length of several nm and width of a few nm, which are hollow and capped at one end. As the level of irradiation is increased to 500 Mrad, onion-like structures were observed.
引用
收藏
页码:225 / 232
页数:8
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