Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor

Memristors are one of the fastest developing electronic devices in the field of data storage and brain inspired neural computing. As a two terminal device, memristors are numerously utilized as resistive random access memories (RRAM) and energy efficient artificial synapses. Herein, the fabrication of perovskite-type rubidium lead chloride quantum dots (RPCQDs) is reported as a functional layer in a memristive system. The device, Al/RPCQDs/indium doped tin oxide (ITO), exhibits a cycling-induced decrease in SET voltage, where Al and ITO work as a top and bottom electrode respectively. However, time dependent self-recovery to the pristine state is observed in the Al/RPCQDs/ITO device. In contrast, the self-rejuvenation is suppressed when a buffer capped conducting polymer (BCCP) is incorporated on the ITO layer to make a Al/RPCQDs/BCCP/ITO structure. This customized device structure successfully retains the reproducible bipolar switching behavior without severe deviation in operating voltages, which helps in studying reliable memristive properties. In addition, the Al/RPCQDs/BCCP/ITO memristive device also demonstrates some essential synaptic functions such as pair-pulse facilitation, long-term potentiation, and long-term depression.