Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes

被引：3
|
作者：
Jayavel, P
Asokan, K
Kanjilal, D
Kumar, J [1 ]
机构：
[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, India
[2] Ctr Nucl Sci, New Delhi 67, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2000年 / 3卷 / 03期
关键词：
irradiation; Schottky barrier diode; annealing; fluence;
D O I：
10.1016/S1369-8001(00)00032-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Au Schottky barrier diodes (SBDs) have been irradiated using high-energy carbon ion fluences of 1 x 10(11), 1 x 10(12) and 1 x 10(13)cm(-2). Current-voltage characteristics of unirradiated and irradiated diodes have been analyzed. The change in reverse leakage current increases with increasing ion fluence due to the irradiation-induced defects at the interface. The diodes were annealed at 523 and 623 K to study the effect of annealing. The rectifying behavior of the irradiated SBDs improves at 523 K. But at 623 K, the diode behavior deteriorates irrespective of the fluences, Better enhancement in the barrier height and also improvement in the ideality factor of the diodes has been observed at the annealing temperature of 523 K. Scanning Electron Microscopic analysis was carried out on the irradiated samples to delineate the projected range of the defects by high-energy carbon ion irradiation. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：195 / 199
页数：5
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