Critical field of Al-doped MgB2 samples:: Correlation with the suppression of the σ-band gap -: art. no. 144505

被引：70
|
作者：
Putti, M
Ferdeghini, C
Monni, M
Pallecchi, I
Tarantini, C
Manfrinetti, P
Palenzona, A
Daghero, D
Gonnelli, RS
Stepanov, VA
机构：
[1] Univ Genoa, Dipartimento Fis, INFM, LAMIA, I-16146 Genoa, Italy
[2] Univ Genoa, Dipartimento Chim & Chim Ind, INFM, LAMIA, I-16146 Genoa, Italy
[3] Politecn Torino, Dipartimento Fis, INFM, LAMIA, I-10129 Turin, Italy
[4] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 14期
关键词：
D O I：
10.1103/PhysRevB.71.144505
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a study of the effect of Al substitution on the upper critical field, B-c2, in AlxMg1-xB2 samples is presented. We find a straightforward correlation between B-c2 and the sigma-band gap, Delta(sigma), evaluated by point-contact measurements. Up to x=0.2, B-c2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of Delta(sigma).
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页数：6
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