Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates prepared by the soft chemical method

被引:17
|
作者
Simoes, A. Z. [1 ]
Ramirez, M. A. [1 ]
Foschini, C. R. [3 ]
Moura, F. [2 ]
Varela, J. A. [3 ]
Longo, E. [3 ]
机构
[1] Univ Estadual Paulista Unesp, Fac Engn Guaratingueta, BR-12516410 Guaratingueta, SP, Brazil
[2] Univ Fed Itajuba Unifei, BR-3590037 Itabira, MG, Brazil
[3] Univ Estadual Paulista Unesp, Inst Quim, BR-14800900 Araraquara, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Films; Interfaces; Dielectric properties; Ferroelectric properties; ELECTRICAL-PROPERTIES; SRBI2TA2O9; CRYSTAL;
D O I
10.1016/j.ceramint.2012.01.034
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bi0.85La0.15FeO3 (BLFO015) thin films were deposited by the polymeric precursor solution on La0.5Sr0.5CoO3 substrates. For comparison, the films were also deposited on Pt bottom electrode. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15% at a temperature of 500 degrees C for 2 h. A substantial increase in the remnant polarization (P-r) with La0.5Sr0.5CoO3 bottom electrode (P-r approximate to 34 mu C/cm(2)) after a drive voltage of 9 V was observed when compared with the same film deposited on Pt substrate. The leakage current behavior at room temperature decreased from 10(-8) (Pt) to 10(-10) A/cm(2) on (La0.5Sr0.5CoO3) electrode under a voltage of 5 V. The fatigue resistance of the Au/BLFO015/LSCO/Pt/TiO2/SiO2/Si (1 0 0) capacitors with a thickness of 280 nm exhibited no degradation after 1 x 10(8) switching cycles at a frequency of 1 MHz. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:3841 / 3849
页数:9
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