Quantum computing on long-lived donor states of Li in Si

被引:29
|
作者
Smelyanskiy, VN
Petukhov, AG
Osipov, VV
机构
[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA
[2] S Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA
[3] LLC, El Segundo, CA 90245 USA
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 08期
关键词
D O I
10.1103/PhysRevB.72.081304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We predict a gigantically long lifetime of the first excited state of an interstitial lithium donor in silicon. The nature of this effect roots in the anomalous level structure of the 1s Li manifold under external stress. Namely, the coupling between the lowest two states of the opposite parity is very weak and occurs via intervalley phonon transitions only. We propose to use these states under the controlled ac and dc stress to process quantum information. We find an unusual form of the elastic-dipole interaction between different donors. This interaction scales with the interdonor distance R as R-3 or R-5 for the transitions between the states of the same or opposite parity, respectively. The long-range R-3 interaction provides a high fidelity mechanism for two-qubit operations.
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页数:4
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