Plasma process modeling for integrated circuits manufacturing

被引：0
|
作者：
Meyyappan, M [1 ]
Govindan, TR [1 ]
机构：
[1] Sci Res Associates Inc, Glastonbury, CT 06033 USA
来源：
VLSI DESIGN | 1998年 / 6卷 / 1-4期
关键词：
plasma deposition; plasma etching; modeling; reactor model;
D O I：
10.1155/1998/27636
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A reactor model for plasma-based deposition and etching is presented. Two-dimensional results are discussed in terms of plasma density, ion flux, and ion energy. Approaches to develop rapid CAD-type models are discussed.
引用
收藏
页码：409 / 412
页数：4
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