Temperature stability of photoluminescence in heterostructures with InGaAs/GaAs quantum well and Mn-delta-doped acceptor layer in GaAs barrier

被引：1

作者：

Dorokhin, M. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Prokof'eva, M. M. ^{[1
]}

Sholina, A. E. ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603600, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

EMISSION; DYNAMICS;

D O I：

10.1134/S1063785010090130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the electro- and photoluminescence of heterostructures with InGaAs/GaAs quantum well and a closely spaced manganese delta (delta)-doped layer in the GaAs barrier was investigated. It is found that the proposed heterostructures exhibit increased temperature stability and decreased temperature quenching as compared to the control structures containing no delta-doped layers. An increase in the operating temperature is explained by the appearance of an additional potential barrier for electrons due to the delta-doped acceptor layer formation in the near-surface barrier.

引用

页码：819 / 822

页数：4

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