Effect of heat treatment on the NO2-sensing properties of sputter-deposited indium tin oxide thin films

被引：7
|
作者：
Vijayalakshmi, K. [1 ]
Pillay, Vasanthi V. [2 ]
机构：
[1] Bishop Heber Coll, Dept Phys, Tiruchirappalli, Tamil Nadu, India
[2] Sujatha Degree & PG Coll, Dept Phys, Hyderabad, Andhra Pradesh, India
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 2011年 / 91卷 / 10期
关键词：
ITO film; sputtering; nanostructures; annealing; NO2; sensor; ELECTRICAL-PROPERTIES; TEMPERATURE; FABRICATION;
D O I：
10.1080/09500839.2011.608731
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent conducting indium tin oxide (ITO) films were deposited onto glass substrates by radio-frequency magnetron sputtering at 648 K, under an oxygen partial pressure of 1 Pa. The effect of annealing on the electrical properties of the films was studied. Characterization of the coatings revealed an electrical resistivity below 6.5 x 10(-3) Omega cm. The ITO films deposited at 648K were amorphous, while the crystallinity improved after annealing at 700 K. The surface morphology examined by scanning electron microscopy appears to be uniform over the entire surface area after annealing. The NO2-sensing properties of the ITO films were investigated and showed sensitivity at concentrations lower than 50 ppm, at a working temperature of 600 K.
引用
收藏
页码：682 / 689
页数：8
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