Fowler-Nordheim high electric field stress of power VDMOSFETs

被引：11
|
作者：
Ristic, GS
Pejovic, MM
Jaksic, AB
机构：
[1] Univ Nis, Fac Elect Engn, Nish 18001, Serbia Monteneg
[2] Tyndall Natl Inst, Cork, Ireland
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 07期
关键词：
Fowler-Nordheim injection; high electric field stress; oxide trapped charge; interface traps; switching traps; MOS transistor;
D O I：
10.1016/j.sse.2005.05.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The analysis of defect generations in SiO2 and at SiO2/Si interface during positive/negative high electric field stress of commercial n-channel power VDMOSFETs has been given. Some additional experiments containing the gate bias switching have helped in these defects nature investigations. The combined application of midgap subthreshold technique and charge pumping technique have represented very useful tool for the switching trap behavior revealing. The fixed trap density (Delta N-ft) and switching trap density (Delta N-st) in two power VDMOSFET types during Fowler-Nordheim injections have shown different behaviors. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1140 / 1152
页数：13
相关论文
共 50 条
12345