Towards Resilient Analog In-Memory Deep Learning via Data Layout Re-Organization

被引:1
|
作者
Rashed, Muhammad Rashedul Haq [1 ]
Awad, Amro [2 ]
Jha, Sumit Kumar [3 ]
Ewetz, Rickard [1 ]
机构
[1] Univ Cent Florida, Dept ECE, Orlando, FL 32816 USA
[2] North Carolina State Univ, Dept ECE, Raleigh, NC USA
[3] Univ Texas San Antonio, CS Dept, San Antonio, TX USA
关键词
D O I
10.1145/3489517.3530532
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Processing in-memory paves the way for neural network inference engines. An arising challenge is to develop the software/hardware interface to automatically compile deep learning models onto in memory computing platforms. In this paper, we observe that the data layout organization of a deep neural network (DNN) model directly impacts the model's classification accuracy. This stems from that the resistive parasitics within a crossbar introduces a dependency between the matrix data and the precision of the analog computation. To minimize the impact of the parasitics, we first perform a case study to understand the underlying matrix properties that result in computation with low and high precision, respectively. Next, we propose the XORG framework that performs data layout organization for DNNs deployed on in-memory computing platforms. The data layout organization improves precision by optimizing the weight matrix to crossbar assignments at compile time. The experimental results show that the XORG framework improves precision with up to 3.2X and 31% on the average. When accelerating DNNs using XORG, the write bit-accuracy requirements are relaxed with 1-bit and the robustness to random telegraph noise (RTN) is improved.
引用
收藏
页码:859 / 864
页数:6
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