Fabrication and characterization of Pt-oxide electrode for ferroelectric random access memory application

This paper recommends Pt-oxide for noble electrode of capacitor in advanced ferroelectric random access memory (FRAM). Pt-oxide was deposited by an rf magnetron sputtering system with varying Oz flow ratio [O-2/(O-2+Ar)] on sol-gel derived Pb(Zr,Ti)O-3. The deposition rate of Pt-oxide was higher than that of Pt because of its larger molar volume. However, the deposition rate decreased with further increase in O-2 flow ratio due to the oxidation of target surface. After the consideration of resistivity and chemical bonding state of Pt-oxides, 70% of O-2 flow ratio was adopted as a deposition condition of Pt-oxide. Pt-oxide/PZT/Pt structure showed fatigue fi ee behavior without degradation of I-V characteristic. These results indicate that Pt-oxide is a promising electrode material for ferroelectric capacitor.