Thick Epsilon-Near-Zero ITO Metamaterial Films

被引：0
|
作者：
Ni, Jimmy [1 ]
Sarney, Wendy [1 ]
Bennett, Joe [2 ]
Zhou, Weimin [1 ]
机构：
[1] US Army Res Lab, Sensors & Electron Devices Directorate, Electroopt & Photon Div, 2800 Powder Mill Rd, Adelphi, MD 20783 USA
[2] NIST, Surface & Trace Chem Anal Grp, 100 Bur Dr, Gaithersburg, MD 20899 USA
来源：
2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年
关键词：
epsilon- and mu-Near-Zero; Metamaterials; optoelectronic devices;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
e- and mu-near-zero (EMNZ) metamaterial has been demonstrated for unconventional tailoring and manipulation of the light-matter interaction. Therefore, it provides a platform for new optoelectronic devices having desirable properties and functionalities. In this paper, we studied several ITO films with different thickness and annealing process to explore the possibility to develop a host EMNZ metamaterial for a new type of optoelectronic devices that is environmental insensitive. We have characterized these ITO films with ellispsometry study, X-ray diffraction, TEM and SIMS, etc. The results indicated that a thicker self-assembled annealed ITO film has a no uniform permittivity (epsilon) which varies from a negative to a positive value from the substrate to the top surface. In order to make the ITO metamaterial useful, we studied the method to produce a thicker than 1.5 mu m ITO with epsilon-near-zero (ENZ) and slight negative condition. The goal is to develop an ENZ metamaterial process that is compatible for Si-based integrated optoelectronic platform.
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页数：2
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