Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses

被引：25

作者：

Rublack, T. ^{[1
]}

Hartnauer, S. ^{[1
]}

Kappe, P. ^{[2
]}

Swiatkowski, C. ^{[2
]}

Seifert, G. ^{[1
]}

机构：

[1] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany

[2] Q Cells SE, D-06766 Bitterfeld, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 103卷 / 01期

关键词：

FEMTOSECOND; DYNAMICS;

D O I：

10.1007/s00339-011-6352-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The selective ablation of thin (similar to 100 nm) SiO2 layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm(2) at 2 ps to 480 mJ/cm(2) at 50 fs. Significant corruption of the opened Si surface has been observed above similar to 1200 mJ/cm(2), independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.

引用

页码：43 / 50

页数：8

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