Study of nonlinear-optical characteristics of AgGa1-xInxSe2 crystals

被引：16
|
作者：
Badikov, VV
Laptev, VB
Panyutin, VL
Ryabov, EA
Shevyrdyaeva, GS
机构：
[1] Kuban State Univ, Lab Nobel Technol, Krasnodar 350058, Russia
[2] Russian Acad Sci, Inst Spect, Troitsk 142190, Moscow Reg, Russia
来源：
QUANTUM ELECTRONICS | 2005年 / 35卷 / 03期
关键词：
nonlinear-optical crystals; quadratic nonlinear susceptibility; radiation resistance;
D O I：
10.1070/QE2005v035n03ABEH002795
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nontinear-optical characteristics of AgGa1-xInxSe2 crystals with x = 0.25 - 0.34 are studied. The experimental dependence of the wavelength of noncritical phase matching on the indium concentration is obtained upon second-harmonic generation by pumping the crystal by a CO2 laser. The quadratic nonlinear susceptibility is measured by the absolute method. The radiation resistance threshold for pulsed radiation from the CO2 laser is determined.
引用
收藏
页码：263 / 267
页数：5
相关论文
共 50 条
  • [1] Nonlinear Optical Properties of the AgGa1-xInxSe2 crystal
    Zhao, GuoDong
    Zhao, Xin
    Zhu, ShiFu
    [J]. ADVANCED RESEARCH ON MATERIAL ENGINEERING, CHEMISTRY AND ENVIRONMENT, 2013, 788 : 85 - +
  • [2] Growth and characterization of IR nonlinear AgGa1-xInxSe2 crystals
    [J]. 2005, Chinese Ceramic Society, Beijing, China (34):
  • [3] AgGa1-xInxSe2 nonlinear crystals for noncritical phase matching processes
    Badikov, VV
    Chizhikov, VI
    Laptev, VB
    Panyutin, VL
    Shevyrdyaeva, GS
    Scherbakov, SI
    [J]. NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS, DEVICES, AND APPLICATIONS II, 2003, 4972 : 139 - 144
  • [4] Preparation and structure of AgGa1-xInxSe2 single crystals
    Badikov, VV
    Kuz'micheva, GM
    Panyutin, VL
    Rybakov, VB
    Chizhikov, VI
    Shevyrdyaeva, GS
    Shcherbakov, SI
    [J]. INORGANIC MATERIALS, 2003, 39 (10) : 1028 - 1034
  • [5] Research on the thermal expansion of AgGa1-xInxSe2 single crystals
    Sha, Mingyu
    Zhao, Beijun
    Huang, Wei
    He, Zhiyu
    Chen, Baojun
    Zhu, Shifu
    Liu, Mengdi
    Feng, Bo
    Liu, Hui
    Sun, Hui
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 75 : 112 - 117
  • [6] Study on annealing of AgGa1-xInxSe2 single crystal
    Wan, Shu-Quan
    Zhu, Shi-Fu
    Zhao, Bei-Jun
    Huang, Yi
    Zhu, Wei-Lin
    Xu, Cheng-Fu
    He, Zhi-Yu
    Chen, Bao-Jun
    Zhao, Guo-Dong
    [J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2008, 37 (01): : 52 - 55
  • [7] Study on the crystal growth and properties of AgGa1-xInxSe2
    School of Material Sci. and Eng., Sichuan Univ., Chengdu 610064, China
    [J]. Sichuan Daxue Xuebao (Gongcheng Kexue Ban), 2007, 2 (107-110):
  • [8] Growth and characterization of AgGa1-xInxSe2 crystals with high indium contents
    Wan, Shuquan
    Zhu, Shifu
    Zhao, Beijun
    Chen, Baojun
    He, Zhiyu
    Xu, Jianhua
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 713 - 716
  • [9] Properties of AgGa1-xInxSe2 single crystals grown by Bridgman method
    Huang, Y.
    Zhao, B. J.
    Zhu, S. F.
    Zhu, W. L.
    Xu, C. F.
    Wan, S. Q.
    He, Z. Y.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2007, 42 (03) : 227 - 230
  • [10] Synthesis of AgGa1-xInxSe2 polycrystalline materials
    Liu, J
    Zhao, BJ
    Zhu, SF
    Huang, Y
    Zhang, JJ
    Zhu, WL
    Xu, CF
    Chen, BJ
    Li, M
    He, ZY
    [J]. JOURNAL OF RARE EARTHS, 2006, 24 : 269 - 271
12345