Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs

被引：0
|
作者：
Zhou, Ruiping [1 ]
Appenzeller, Joerg [1 ]
机构：
[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47906 USA
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：2
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