Electromigration induced stress in Through-Silicon-Via (TSV)

被引：0
|
作者：
Su, Fei [1 ]
Lu, Zixing [1 ]
Liu, Ping [1 ]
Li, Weijia [1 ]
机构：
[1] Beijing Univ Aeronaut & Astronaut, Sch Aeronaut Sci & Engn, Beijing 100083, Peoples R China
来源：
2013 14TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2013年
关键词：
Electromigration induced stress (EIS); Finite element; through-silicon-via (TSV);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the methodology for evaluation of electromigration induced stress in through-silicon-via (TSV) was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user development on the platform of ABAQUS. Corresponding FEM model was build and its simulation precision was confirmed by comparing the FEM and analytical results of a benchmark problem. Then electromigration induced stress in TSV was instigated with the FEM model, the maximum sphere stress was about 59 MPa. Vacancy density and its variation with time were also investigated, it was found that vacancy density in TSV increased with input current. These results provide a basis for comprehensive evaluation of TSV reliability.
引用
收藏
页码：896 / 902
页数：7
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