Spectral Properties of CVD diamond and High-Purity Semi-Insulating SiC

被引：0
|
作者：
Polyakov, V. I. [1 ]
Garin, B. M. [1 ]
Rukovishnikov, A. I. [1 ]
Avdeeva, L. A. [1 ]
Dutta, J. M. [2 ]
Varnin, V. P. [3 ]
机构：
[1] RAS, Inst Radio Engn & Elect, Moscow 103907, Russia
[2] North Carolina Cent Univ, Durham, NC 27707 USA
[3] RAS, Inst Phys Chem, Moscow 117942, Russia
来源：
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年
关键词：
DIELECTRIC LOSS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CVD diamond and HMI SiC, which are among the most promising low dielectric loss materials for mm and sub-mm electromagnetic waves, were studied by charge-based deep level transient spectroscopy. The activation energy, capture cross-section, and concentration of the levels, which are induced by defects of the different nature, were obtained. Experimental results and their implication to loss properties are discussed.
引用
收藏
页码：183 / +
页数：2
相关论文
共 50 条
  • [1] Defects in high-purity semi-insulating SiC
    Son, NT
    Magnusson, B
    Zolnai, Z
    Ellison, A
    Janzén, E
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 437 - 442
  • [2] Clustering of vacancy defects in high-purity semi-insulating SiC
    Aavikko, R.
    Saarinen, K.
    Tuomisto, F.
    Magnusson, B.
    Son, N. T.
    Janzen, E.
    [J]. PHYSICAL REVIEW B, 2007, 75 (08)
  • [3] Point Defects in Chemical-Vapor Deposited Diamond, High-Purity Semi-Insulating SiC, and Epitaxial GaN
    Polyakov, V. I.
    Rukovishnikov, A. I.
    Garin, B. M.
    Druz, B.
    [J]. WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13, 2012, 45 (07): : 199 - 207
  • [4] Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
    Alfieri, G.
    Kimoto, T.
    Pensl, G.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 455 - +
  • [5] High-purity semi-insulating 4H-SiC for microwave device applications
    J. R. Jenny
    D. P. Malta
    St G. Müller
    A. R. Powell
    V. F. Tsvetkov
    H. McD Hobgood
    R. C. Glass
    C. H. Carter
    [J]. Journal of Electronic Materials, 2003, 32 : 432 - 436
  • [6] High-purity semi-insulating 4H-SiC for microwave device applications
    Jenny, JR
    Malta, DP
    Müller, SG
    Powell, AR
    Tsvetkov, VF
    Hobgood, HM
    Glass, RC
    Carter, CH
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 432 - 436
  • [7] 4H-SiC planar MESFETs on high-purity semi-insulating substrates
    Yim, Jeong Hyuk
    Song, Ho Keun
    Moon, Jeong Hyun
    Seo, Han Seok
    Lee, Jong Ho
    Na, Hoon Joo
    Lee, Jae Bin
    Kim, Hyeong Joon
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 763 - +
  • [8] Fabrication of 4H-SiC planar MESFETs on high-purity semi-insulating substrates
    Yim, Jeonghyuk
    Song, Hokeun
    Moon, Jeonghyun
    Seo, Hanseok
    Lee, Jongho
    Na, Hoonjoo
    Lee, Jaebin
    Kim, Hyeongjoon
    [J]. ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 109 - 112
  • [9] Effects of electron irradiation on deep centers in high-purity semi-insulating 6H-SiC
    Fang, Z.-Q.
    Claflin, B.
    Look, D. C.
    Farlow, G. C.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 307 - 311
  • [10] Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates
    Fang, ZQ
    Claflin, B
    Look, L
    Polenta, L
    Mitchel, WC
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 336 - 340
12345