Photoluminescent properties of ZnO films deposited on Si substrates

被引：0
|
作者：
Zhang, GB
Shi, CS
Han, ZF
Shi, JY
Fu, ZX
Kirm, M
Zimmerer, G
机构：
[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[2] Univ Hamburg, Inst Expt Phys 2, D-2000 Hamburg, Germany
来源：
CHINESE PHYSICS LETTERS | 2001年 / 18卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The photoluminescence of ZnO films deposited on Si substrates by reactive de sputtering has been studied by using a synchrotron radiation (SR) light source. The excitation spectra show a strong excitation band around 195nm related to the 390nm emission band. Under SR vacuum ultraviolet excitation, a new emission band peaked at 290nm was found for the first time, besides the ultraviolet emission band (390nm) and green band (520 nm).
引用
收藏
页码：441 / 442
页数：2
相关论文
共 50 条
  • [1] UV luminescence and spectral properties of ZnO films deposited on Si substrates
    Shi, CS
    Fu, ZX
    Guo, CX
    Ye, XL
    Wei, YG
    Deng, J
    Shi, JY
    Zhang, GB
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 101 : 629 - 632
  • [2] Ferroelectric properties of PZT thin films deposited on ZnO/Si substrates
    Lee, SH
    Ryu, MK
    Kim, JP
    Kim, SR
    Heo, JY
    Jang, MS
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1105 - S1107
  • [3] Temperature and time dependence of emission properties of ZnO films deposited on Si substrates
    Zhang, GB
    Zhou, HJ
    Shi, CS
    Shi, JY
    Zhou, YX
    Zhang, XY
    Fu, ZX
    Kirm, M
    Zimmerer, G
    [J]. SURFACE REVIEW AND LETTERS, 2002, 9 (02) : 699 - 703
  • [4] Photoluminescence and structural properties of ZnO films deposited on Si substrates by chemical spray deposition
    Sali, S.
    Tala-Ighil, R.
    Kermadi, S.
    Boumaour, M.
    Kechouane, M.
    [J]. THIN FILMS AND POROUS MATERIALS, 2009, 609 : 111 - +
  • [5] Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates
    Chatterjee, S
    Nandi, SK
    Maikap, S
    Samanta, SK
    Maiti, CK
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) : 92 - 96
  • [6] Effects of thermal treatment on the properties of ZnO films deposited on MgO-buffered Si substrates
    Chen, SJ
    Liu, YC
    Ma, JG
    Lu, YM
    Zhang, JY
    Shen, DZ
    Fan, XW
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) : 86 - 91
  • [7] Effect of sputtering parameters on photoluminescence properties of Al doped ZnO films deposited on Si substrates
    Chen, Haixia
    Ding, Jijun
    Guo, Wenge
    [J]. CERAMICS INTERNATIONAL, 2014, 40 (03) : 4847 - 4851
  • [8] Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates
    Lee, Yueh-Chien
    Hu, Sheng-Yao
    Water, Walter
    Tiong, Kwong-Kau
    Feng, Zhe-Chuan
    Chen, Yen-Ting
    Huang, Jen-Ching
    Lee, Jyh-Wei
    Huang, Chia-Chih
    Shen, Jyi-Lai
    Cheng, Mou-Hong
    [J]. JOURNAL OF LUMINESCENCE, 2009, 129 (02) : 148 - 152
  • [9] Highly oriented ZnO thin films deposited on Ru/Si substrates
    Lim, WT
    Lee, CH
    [J]. THIN SOLID FILMS, 1999, 353 (1-2) : 12 - 15
  • [10] Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering
    Peng, XingPing
    Wang, ZhiGuang
    Song, Yin
    Ji, Ta
    Zang, Hang
    Yang, YingHu
    Jin, YunFan
    [J]. SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2007, 50 (03): : 281 - 286
12345