Comparison of RSG-MOSFET and capacitive MEMS resonator detection

被引：22
|
作者：
Abelé, N
Pott, V
Boucart, K
Casset, E
Séguéni, K
Ancey, P
Ionescu, AM
机构：
[1] Ecole Polytech Fed Lausanne, Elect Lab, LEG, Lausanne, Switzerland
[2] STMicroelect, Crolles, France
[3] CEA, LETI, Grenoble, France
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 05期
关键词：
D O I：
10.1049/el:20047409
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simulation comparison of MOSFET and double-metal-plate capacitive techniques for vibration detection of MEMS resonator and sensor applications is reported. A novel resonant suspended-gate MOSFET (RSG-MOSFET) analytical model is developed and used for simulating the mechanical and electrical behaviour of the resonant device under electrostatic actuation. It is demonstrated that a MOS-based detection offers signal amplification advantages over conventional capacitive detection especially for narrow beam resonators.
引用
收藏
页码：242 / 244
页数：3
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