Novel RF process monitoring test structure for silicon devices

被引：3
|
作者：
Sia, CB [1 ]
Ong, BH
Lim, KM
Yeo, KS
Do, MA
Ma, JG
Alam, T
机构：
[1] Adv RFIC S Pte Ltd, Singapore 609930, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Cascade Microtech Inc, Beaverton, OR 97006 USA
来源：
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2005年 / 18卷 / 02期
关键词：
MIM capacitor; MOS varactor and interconnect; process monitoring; RFCMOS; scribe line;
D O I：
10.1109/TSM.2005.845095
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in de and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
引用
收藏
页码：246 / 254
页数：9
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