A mechanism for unipolar resistance switching in oxide nonvolatile memory devices

被引：18
|
作者：
Sanchez, M. J. [1 ,2 ]
Rozenberg, M. J. [3 ,4 ]
Inoue, I. H. [5 ]
机构：
[1] Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[3] Univ Paris 11, CNRS, UMR8502, Phys Solides Lab, F-91405 Orsay, France
[4] Univ Buenos Aires, FCEN, Dept Fis, RA-1428 Buenos Aires, DF, Argentina
[5] CERC, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 25期
关键词：
D O I：
10.1063/1.2824382
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. (c) 2007 American Institute of Physics.
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页数：3
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