Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy

被引：5
|
作者：
Kashima, Y [1 ]
Munakata, T [1 ]
机构：
[1] Oki Elect Ind Co Ltd, Components Div, Tokyo 1938550, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 09期
关键词：
emission spectrum; InGaAsP; light-emitting diode (LED); multiple quantum well; selective-area growth;
D O I：
10.1109/68.705597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied the effects of a composition-changing emission region on the emission spectrum using an InGaAsP multiple-quantum-well edge-emitting light-emitting diode (ELED), The ELED was fabricated by selective-area growth using a gradually changing mask stripe width. The spectral half-width exceeded 120 nm at an ambient temperature of 25 degrees C, offering a wider spectrum than that of conventional Light-emitting diodes.
引用
收藏
页码：1223 / 1225
页数：3
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