Processing and effects of annealing in sol-gel derived SrBi2Ta2O9 thin films

被引：0
|
作者：
Barz, R [1 ]
Amrhein, F
Shin, YW
Dey, SK
机构：
[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
INTEGRATED FERROELECTRICS | 1998年 / 22卷 / 1-4期
关键词：
ferroelectric thin films; SBT; SrBi2Ta2O9; forming gas anneal; morphology of SBT films;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sol-gel derived SrBi2Ta2O9(SBT) thin films, stoichiometric and titanium doped, were applied to pure platinum substrates and annealed in oxygen and forming gas. The films were characterized using SEM, EDS, and AES. The data showed that bismuth diffused into the platinum layer during the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that originated from the platinum layer and grew through the SET film. Surrounding the towers, local areas of increased roughness and porosity were observed on the SET film.
引用
收藏
页码：585 / 594
页数：10
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