Study of self-organization in disordered materials using information theory

被引：4

作者：

Avacheva, T. G. ^{[1
]}

Bodyagin, N. V. ^{[1
]}

Vikhrov, S. P. ^{[1
]}

Mursalov, S. M. ^{[1
]}

机构：

[1] Ryazan State Radioengn Univ, Ryazan 390005, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 05期

关键词：

61.18.-j; 61.43.Dq; 61.43.-j; 68.47.Fg;

D O I：

10.1134/S1063782608050011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A method of studying order in the structure of disordered materials using a calculation of the average mutual information is suggested. The algorithm of calculation of the average mutual information on an undirected vector between the points of the material surface adapted to the study of disordered semiconductors is described. Using models of the surfaces with different degrees of order, complex testing of the method is performed. Samples of amorphous silicon compounds obtained under different technological conditions are experimentally investigated.

引用

页码：499 / 504

页数：6

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