Tin oxide thin layers obtained by vacuum evaporation of tin and annealing under oxygen flow

被引：8

作者：

Laghrib, Souad ^{[1
]}

Amardjia-Adnani, Hania ^{[1
]}

Abdi, Djamila ^{[1
]}

Pelletier, Jean Marc ^{[2
]}

机构：

[1] Univ Ferhat Abbas, Lab Dosage Analyse & Caracterisat Haute Resoulut, Setif, Algeria

[2] Inst Natl Sci Appl, CNRS, UMR 5510, GEMPPM, F-69621 Villeurbanne, Lyon, France

来源：

VACUUM | 2008年 / 82卷 / 08期

关键词：

tin dioxide; photovoltaic cells; annealing; vacuum evaporation; nanocrystalline;

D O I：

10.1016/j.vacuum.2007.11.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin dioxide layers have been prepared by vacuum evaporation of tin on ordinary glass substrates. Thickness of the deposited tin layers was 500 or 1000 angstrom. Enrichment in oxygen was ensured by a thermal annealing at temperatures between 300 and 500 degrees C, for 1, 2, 4, 6, 8 and 10 h. The layers were characterized using X-ray diffraction, environmental scanning electron microscopy and EDX analysis and conductivity by the 4 point method. Oxygen enrichment of these films during annealing at high temperature induces the formation of the nanocrystalline tin oxide. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：782 / 788

页数：7

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