Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions

被引：20

作者：

Xu, Meng ^{[1
]}

Li, Mingen ^{[2
]}

Khanal, Pravin ^{[1
]}

Habiboglu, Ali ^{[1
]}

Insana, Blake ^{[1
]}

Xiong, Yuzan ^{[3
,4
]}

Peterson, Thomas ^{[5
]}

Myers, Jason C. ^{[6
]}

Ortega, Deborah ^{[1
]}

Qu, Hongwei ^{[4
]}

Chien, C. L. ^{[2
]}

Zhang, Wei ^{[3
]}

Wang, Jian-Ping ^{[5
]}

Wang, W. G. ^{[1
]}

机构：

[1] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

[2] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

[3] Oakland Univ, Dept Phys, Rochester, MI 48309 USA

[4] Oakland Univ, Dept Elect & Comp Engn, Rochester, MI 48309 USA

[5] Univ Minnesota, Dept Elect & Comp Engn, 200 Union St Southeast, Minneapolis, MN 55455 USA

[6] Univ Minnesota, Characterizat Facil, 100 Union St Southeast, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW LETTERS | 2020年 / 124卷 / 18期

关键词：

EXCHANGE BIAS; ELECTRIC CONTROL; ANISOTROPY;

D O I：

10.1103/PhysRevLett.124.187701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O-x formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

引用

页数：6

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