1.3-micron GaAsSb/GaAs VCSELs

被引：0

作者：

Dowd, P ^{[1
]}

Johnson, SR ^{[1
]}

Chaparro, SA ^{[1
]}

Feld, SA ^{[1
]}

Horning, MP ^{[1
]}

Adamcyk, M ^{[1
]}

Zhang, YH ^{[1
]}

机构：

[1] Lytek Corp, Phoenix, AZ 85034 USA

来源：

SEMICONDUCTOR OPTOELECTRONIC DEVICES FOR LIGHTWAVE COMMUNICATION | 2003年 / 5248卷

关键词：

VCSEL; GaAsSb; long wavelength;

D O I：

10.1117/12.512732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10 degreesC and 0.1mW at 70 degreesC and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125 degreesC for thousands of hours.

引用

页码：135 / 139

页数：5

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