Optical gap and dc conductivity of disordered materials of (As2Se3)100-x(SbSI)x type

The paper presents the results of a study of some electrical and optical properties of the five-component chalcogenide glasses in the quasi-binary (As2Se3)(100-x)(SbSI), system. It is a system with the variable ratio of classical amorphous compound As2Se3 and the molecule of antimony sulfbiodide, SbSI, which in the monocrystal form is characterized as a ferroelectric. The investigated glasses, with various concentration of SbSI, were synthesized from high-purity elemental components by fast cooling from the melt. The amorphous character of the samples was proved using standard optical and X-ray techniques. The temperature dependence of de conductivity of bulk samples has been investigated in the range from room temperature to the temperature below the glass transition temperature T-g. On the basis of the obtained results, the conductivity activation energy was determined. By studying transparency spectra in a wide range of optical and IR part of the electromagnetic radiation, it was found that the position of the absorption edge depends on the Sb content. Optical band gap and tail-state region were determined.