Matching Charge Extraction Contact for Infrared PbS Colloidal Quantum Dot Solar Cells

被引:29
|
作者
Li, Mingyu [1 ,2 ]
Chen, Shiwu [1 ]
Zhao, Xinzhao [1 ]
Xiong, Kao [3 ]
Wang, Bo [1 ]
Shah, Usman Ali [1 ]
Gao, Liang [1 ]
Lan, Xinzheng [3 ]
Zhang, Jianbing [3 ]
Hsu, Hsien-Yi [4 ,5 ]
Tang, Jiang [1 ,3 ]
Song, Haisheng [1 ,2 ,3 ]
机构
[1] Huazhong Univ Sci & Technol HUST, Wuhan Natl Lab Optoelect WNLO, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Wenzhou Adv Mfg Technol Res Inst, Wenzhou, Zhejiang, Peoples R China
[3] Huazhong Univ Sci & Technol HUST, Sch Optic & Elect Informat, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[4] City Univ Hong Kong, Sch Energy & Environm, Kowloon Tong, Hong Kong 999077, Peoples R China
[5] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
colloidal quantum dots; energy level matching; infrared solar cells; lead sulfide; sputtered ZnO; PERFORMANCE; PHOTOVOLTAICS; SB2SE3; FILMS;
D O I
10.1002/smll.202105495
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Infrared solar cells (IRSCs) can supplement silicon or perovskite SCs to broaden the utilization of the solar spectrum. As an ideal infrared photovoltaic material, PbS colloidal quantum dots (CQDs) with tunable bandgaps can make good use of solar energy, especially the infrared region. However, as the QD size increases, the energy level shrinking and surface facet evolution makes us reconsider the matching charge extraction contacts and the QD passivation strategy. Herein, different to the traditional sol-gel ZnO layer, energy-level aligned ZnO thin film from a magnetron sputtering method is adopted for electron extraction. In addition, a modified hybrid ligand recipe is developed for the facet passivation of large size QDs. As a result, the champion IRSC delivers an open circuit voltage of 0.49 V and a power conversion efficiency (PCE) of 10.47% under AM1.5 full-spectrum illumination, and the certified PCE is over 10%. Especially the 1100 nm filtered efficiency achieves 1.23%. The obtained devices also show high storage stability. The present matched electron extraction and QD passivation strategies are expected to highly booster the IR conversion yield and promote the fast development of new conception QD optoelectronics.
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页数:9
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